• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a substrate (1) for a surface acoustic wave or volume acoustic wave device, comprising a support substrate (11) and a piezoelectric layer (10) on said support substrate, characterized in that the support substrate (11) comprises a semiconductor layer (111) on a stiffening substrate (110) having a coefficient of thermal expansion closer to the thermal expansion coefficient of the material of the piezoelectric layer (10) than that of the silicon, the semiconductor layer -conductor (111) being arranged between the piezoelectric layer (10) and the stiffening substrate (110).
    公开号:FR3045933A1
    申请号:FR1563058
    申请日:2015-12-22
    公开日:2017-06-23
    发明作者:Marcel Broekaart；Thierry Barge；Pascal Guenard；Ionut Radu；Eric Desbonnets；Oleg Kononchuk
    申请人:Soitec SA；
    IPC主号:
    专利说明:

    SUBSTRATE FOR ACOUSTIC SURFACE WAVE OR ACOUSTIC WAVE DEVICE OF TEMPERATURE COMPENSATED VOLUME
    FIELD OF THE INVENTION
    The present invention relates to a substrate for a temperature-compensated volume acoustic wave or surface acoustic wave device, as well as to a method of manufacturing such a substrate and to a surface acoustic wave or acoustic bulk wave device. comprising such a substrate.
    BACKGROUND OF THE INVENTION
    Surface acoustic wave devices, generally designated by the acronym SAW, the Anglo-Saxon term "Surface Acoustic Wave", find applications in the field of radio-frequency (RF) communications, especially for applications to filters.
    A SAW device typically comprises a piezoelectric layer and two electrodes in the form of two interdigitated metal combs deposited on the surface of said piezoelectric layer.
    An electrical signal, such as an electrical voltage change, applied to an electrode is converted into an elastic wave propagating on the surface of the piezoelectric layer. This wave is again converted into an electrical signal by reaching the other electrode.
    The choice of the piezoelectric material takes into account the coefficient of the electromechanical coupling which reflects the rate of the electromechanical conversion by said material, and the temperature stability of the oscillation frequency of the piezoelectric material.
    However, the SAW devices are very sensitive to temperature variations, which induce different expansions of the piezoelectric layer and the metal electrodes due to the different coefficients of thermal expansion of these materials.
    More precisely, the coefficient of frequency in temperature, denoted TCF, acronym for the Anglo-Saxon term "Temperature Coefficient of Frequency", which is defined as the variation of frequency for a given frequency f as a function of the temperature T, is given by the formula :
    or :
    V is the velocity of the surface acoustic waves and CTE is the coefficient of thermal expansion of the piezoelectric material in the direction of propagation of the surface acoustic waves.
    There are already measures to compensate for the effects of temperature on SAW devices.
    In particular, the article by Hashimoto et al [1] presents a review of the different temperature compensation techniques of SAW devices.
    Among these different techniques, there are essentially: (1) a so-called "overlay" technique consisting in covering the surface of the piezoelectric layer and the electrodes of a dielectric material (typically, silicon oxide (S1O2)), which has a coefficient of thermal expansion in the opposite direction to that of the piezoelectric layer, (2) a technique called "wafer bonding" of sticking the piezoelectric layer on a support substrate whose thermal expansion coefficient is as low as possible so as to block the thermal expansion of the piezoelectric layer. Said support substrate, which may be for example silicon, sapphire, glass or spinel (MgAl 2 O 4), thus fulfills a function of stiffening the piezoelectric layer. Given its thickness, the piezoelectric layer is considered to extend infinitely in a direction opposite to the electrodes, so that the presence of the support substrate does not disturb the propagation of surface acoustic waves. However, the bonding of the support substrate seems to create spurious resonances at frequencies higher than the main frequency of the device (see [1], Fig. 5).
    Among the materials envisaged for the support substrate in this second technique, silicon seems to be the most promising because it makes it possible to implement methods of integrating electronic components at the substrate scale ("wafer level", according to the English terminology -saxonne).
    However, there is a significant difference in the coefficient of thermal expansion between the piezoelectric material and the silicon (for a crystal of LiTaC> 3, which is anisotropic, the CTEs are 4x10 "6 / ° C and 14x10" 6 / ° C approximately while the silicon CTE is of the order of 2.3x10 "6 / ° C), which affects the stability of the support substrate / piezoelectric layer stack if it is exposed to high temperatures during subsequent steps However, in view of such steps, it is necessary to ensure the thermal stability of the piezoelectric layer / support substrate stack to a temperature of about 250 ° C.
    A similar problem arises for volume acoustic wave filters and resonators, known by the acronym BAW (the English term "Bulk Acoustic Wave").
    Volume acoustic wave filters and resonators typically include a thin piezoelectric layer (i.e., generally less than 1 μm thick) and two electrodes arranged on each major face of said thin layer. An electrical signal, such as an electrical voltage variation, applied to an electrode is converted into an elastic wave that propagates through the piezoelectric layer. This wave is again converted into an electrical signal by reaching the electrode on the opposite side.
    BRIEF DESCRIPTION OF THE INVENTION
    An object of the invention is to design a substrate for a surface acoustic wave device or for a temperature-compensated volume acoustic wave device which makes it possible to overcome the drawbacks mentioned above. In particular, such a substrate must be more stable than the silicon substrate / piezoelectric layer stack mentioned above to a temperature of about 300 ° C., while allowing easy integration of electronic components.
    According to the invention, there is provided a substrate for a surface acoustic wave or acoustic wave volume device, comprising a support substrate and a piezoelectric layer on said support substrate, characterized in that the support substrate comprises a semi-layer -conductor on a stiffener substrate having a coefficient of thermal expansion closer to the coefficient of thermal expansion of the piezoelectric layer material than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
    The stiffener substrate advantageously comprises sapphire, glass and / or spinel (MgAl 2 O 4).
    Preferably, the semiconductor layer is formed of one of the following materials: silicon, germanium, SiGe, SiC, III-V material.
    Particularly advantageously, the semiconductor layer comprises at least one electronic component. Said electronic component may in particular be chosen from: a CMOS transistor, a switch and a power amplifier.
    According to one embodiment, the ratio between the thickness of the piezoelectric layer and the thickness of the stiffening substrate is less than or equal to 0.125.
    For example, the thickness of the piezoelectric layer is less than 50 μm, preferably less than 20 μm, more preferably less than 1 μm, and the thickness of the stiffening substrate is between 400 and 800 μm.
    According to one embodiment, the substrate comprises a dielectric layer between the piezoelectric layer and the semiconductor layer and a charge trapping layer at the interface between said dielectric layer and the semiconductor layer and / or at the interface between the dielectric layer and the piezoelectric layer.
    The charge trapping layer may comprise a polycrystalline silicon layer.
    In the case where the piezoelectric layer is anisotropic and therefore has at least two different coefficients of thermal expansion in a plane parallel to a main face of the substrate, the thermal expansion coefficient giving the greatest difference with respect to the coefficient of thermal expansion is considered. stiffener substrate. The invention also relates to a surface acoustic wave device comprising a substrate as described above and two electrodes formed of two interdigitated metal combs on the surface of the piezoelectric layer. The invention also relates to a volume acoustic wave device comprising a substrate as described above and two electrodes arranged on either side of the piezoelectric layer.
    Another object relates to a method of manufacturing a substrate as described above, characterized in that it comprises: the transfer of the semiconductor layer on the stiffening substrate from a first donor substrate; transferring the piezoelectric layer on the semiconductor layer from a second donor substrate.
    According to one embodiment, at least one of the transfer steps comprises the following substeps: - formation of a weakening zone in the first or the second donor substrate by implantation of atomic species; gluing the first and second donor substrates respectively to the stiffener substrate or to the semiconductor layer; detachment of said first, respectively second, substrate along the zone of weakening.
    BRIEF DESCRIPTION OF THE DRAWINGS Other features and advantages of the invention will emerge from the detailed description which follows, with reference to the appended drawings, in which: FIG. 1 is a basic cross-sectional view of an acoustic wave filter; temperature-compensated surface; FIG. 2 is a cross-sectional view of a temperature-compensated volume acoustic wave resonator; FIG. 3 is a sectional diagram of a substrate according to an embodiment of the invention; FIG. 4 is a sectional diagram of a temperature compensated surface acoustic wave filter according to one embodiment of the invention, FIG. 5 is a sectional diagram of an acoustic wave filter. temperature compensated surface according to an alternative embodiment of the invention, - Figures 6A to 6E illustrate successive steps of the manufacture of a substrate according to an embodiment of the inven tion.
    For reasons of legibility of the figures, the elements illustrated are not necessarily represented on the scale. Moreover, the elements designated by the same reference signs in different figures are identical.
    DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION
    Figure 1 is a basic view of a surface acoustic wave filter.
    Said filter comprises a piezoelectric layer 10 and two electrodes 12, 13 in the form of two interdigitated metal combs deposited on the surface of said piezoelectric layer. On the opposite side of the electrodes 12, 13, the piezoelectric layer rests on a support substrate 11 intended to provide temperature compensation, the structure of which will be described in detail below. The piezoelectric layer 10 preferably has excellent crystalline quality so as not to cause attenuation of the surface wave. Said layer is therefore monocrystalline. At present, the suitable materials that can be used industrially are quartz, LiNbO 3 or LiTaO 3. The piezoelectric layer 10 is generally obtained by cutting an ingot of one of said materials, the accuracy required for the thickness of said layer being insignificant insofar as the waves must propagate essentially on its surface.
    Figure 2 is a basic view of a volume acoustic wave resonator.
    The resonator comprises a thin piezoelectric layer (that is to say a thickness generally less than 20 nm) and two electrodes 12, 13 arranged on either side of said piezoelectric layer 10. The piezoelectric layer 10 rests on a support substrate 11 whose structure will be described in detail below. To isolate the resonator from the substrate and thus to prevent propagation of the waves in the substrate, a Bragg mirror 14 is interposed between the electrode 13 and the substrate 11. Alternatively (not shown), this isolation could be achieved by providing a cavity between the substrate and the piezoelectric layer. These various arrangements are known to those skilled in the art and will not be described in detail in the present text.
    For a volume acoustic wave device, the piezoelectric layer 10 has a determined and uniform thickness over the entire layer. On the other hand, since the crystalline quality is not of particular importance for the performance of the resonator, a polycrystalline piezoelectric material is acceptable. The piezoelectric layer 10 is therefore generally formed by deposition on a support (for example a silicon substrate). At present, the materials used industrially for such a deposit are AIN, ZnO and PZT.
    Figure 3 is a sectional diagram of a substrate for manufacturing a surface acoustic wave or acoustic wave device of temperature compensated volume according to one embodiment of the invention.
    Said substrate 1 comprises a piezoelectric layer 10 for receiving electrodes to form a surface acoustic wave device or volume.
    The material, the crystalline quality and the thickness of said piezoelectric layer 10 are chosen by those skilled in the art as a function of the intended application. The selection criteria are known in themselves and do not need to be described in detail in this text.
    If the piezoelectric material chosen is anisotropic, it has different coefficients of thermal expansion in different directions.
    The piezoelectric layer 10 is disposed on a composite support substrate 11, that is to say formed of a stack of several layers of different materials.
    Said support substrate 11 comprises a substrate 110 said stiffener whose function, within the substrate 1, is to ensure the rigidity of the stack especially during heat treatments.
    The stiffening substrate 110 advantageously comprises sapphire, glass and / or spinel (MgAl 2 O 4).
    These materials have the advantage of having a coefficient of thermal expansion closer to the thermal expansion coefficient of the piezoelectric material than silicon, which allows a better temperature stability (up to about 300 ° C) of the stack, although that this greater proximity of the coefficients of thermal expansion slightly penalizes the temperature compensation effect.
    The stiffening substrate 110 also has a high thickness, typically of the order of 400 to 800 μm, which is much greater than the thickness of the other layers of the substrate 1 and in particular much greater than the thickness of the piezoelectric layer, which is generally less than 50 μm, preferably less than 20 μm, and more preferably less than 1 μm. Thus, the temperature behavior of the stiffening substrate is preponderant compared to that of the other layers.
    Due to the relative proximity between the coefficient of thermal expansion of the stiffening substrate 110 and the piezoelectric layer 10, the stresses due to the difference in thermal expansion coefficients during thermal treatments on the substrate 1 are minimized.
    Between the stiffening substrate 110 and the piezoelectric layer 10 is interposed a semiconductor layer 111. Said semiconductor layer may comprise silicon, germanium, SiGe, SiC, or a type III-V material, such as GaAs, GaN, InGaN (non-limiting list). Among these materials, germanium and GaAs are less preferred because of their fragility. According to a preferred embodiment of the invention, the semiconductor layer is a silicon layer.
    Particularly advantageously, the semiconductor layer 111 comprises at least one electronic component 112. Said component is manufactured by techniques known in microelectronics. It can thus be a CMOS transistor, a switch, a power amplifier (non-limiting list). Furthermore, vias 113 may be formed inside the semiconductor layer 111 so as to allow electrically connect different components. These components and vias are formed by conventional microelectronics techniques which will not be described in detail in the present text.
    The semiconductor layer 111 is substantially thinner than the stiffening substrate 110. Thus, the semiconductor layer 111 typically has a thickness of between 10 nm and 2 μm. Therefore, even if the material of the semiconductor layer has a difference in thermal expansion coefficient with respect to the piezoelectric material greater than the difference in coefficient of thermal expansion between the material of the stiffener substrate 110 and the piezoelectric material 10, the semiconductor layer 111 is thin enough not to generate mechanical stress in the piezoelectric layer 10 during a heat treatment.
    In addition, with respect to a solid sapphire substrate, the composite substrate 11 formed of the sapphire stiffening substrate 110 and the semiconductor layer 111 allows the integration of electronic components on the rear face of the piezoelectric layer 10.
    According to an advantageous but non-imperative embodiment, a dielectric layer 114 is arranged at the interface between the semiconductor layer 111 and the piezoelectric layer 10. Such a dielectric layer is generally used to promote the bonding of the piezoelectric layer 10 on the semiconductor layer 111. The dielectric layer may be formed, prior to the bonding of the piezoelectric layer 10 to the semiconductor layer 111, either on one of these layers or on each of them (a bonding oxide oxide oxide being produced in the latter case). In this event, a charge-trapping layer 115 is formed under the piezoelectric layer, advantageously interposed between the dielectric layer 114 and the piezoelectric layer 10 or between the semiconductor layer 111 and the dielectric layer 114 in order to trap the electrical charges present. which would be likely to disturb the operation of the electronic components arranged in the semiconductor layer 111. Said trapping layer 115 can comprise for example a polycrystalline or amorphous silicon layer. However, any other layer (or stack of layers) that performs the function of trapping electrical charges can be used.
    FIG. 4 schematically illustrates a surface acoustic wave filter formed on the substrate 1 of FIG. 3. For this purpose, metal electrodes 12, 13 have been deposited in the form of two interdigitated combs on the free surface of the piezoelectric layer 10.
    According to an alternative embodiment illustrated in FIG. 5, the substrate may, after formation of the electrodes 12, 13 on the piezoelectric layer 10, be covered with a layer 15 of dielectric (typically, silicon oxide (SiO 2) ), according to the technique of "overlay" mentioned above. The thickness of the dielectric layer 15 is typically in the range of 100 to 10,000 nm.
    With respect to the embodiment of FIG. 4, the dielectric layer 15, which has a coefficient of thermal expansion in the opposite direction to that of the piezoelectric layer 10, makes it possible to improve the temperature compensation.
    A method of manufacturing a substrate for a surface acoustic wave or acoustic wave volume device according to a non-limiting embodiment of the invention will now be described with reference to FIGS. 6A to 6E. The method described below involves bonding and then thinning a donor substrate, but other techniques, such as a "removable substrate" type approach as described in FR 2,816,445, could be employed. Such a "removable" substrate is made before the manufacture of the components and contains an embrittlement zone or interface for fracturing the donor substrate after assembly on a stiffening substrate.
    Referring to Figure 6A, there is provided a donor substrate 116 comprising the semiconductor layer 111 in which are advantageously integrated electronic components 112 and / or vias 113, according to techniques commonly used in microelectronics.
    With reference to FIG. 6B, the donor substrate 116 is bonded to the stiffening substrate 110, so that the semiconductor layer 111 is at the bonding interface.
    With reference to FIG. 6C, the donor substrate is thinned by the face opposite the semiconductor layer 111 so as to transfer the layer comprising the layer 111 onto the stiffening substrate 110. Said thinning may be mechanical (of the polishing type), chemical (engraving), or other. If necessary, then incorporates electronic components and / or vias to said layer.
    With reference to FIG. 6D, a donor substrate 118 of a piezoelectric material is provided and an embrittlement zone 119 defining a piezoelectric layer to be transferred, namely the piezoelectric layer 10, is formed by implantation of atomic species in said substrate. of the final substrate illustrated in Figure 3. The implantation conditions are known in the state of the art, namely a dose of the order of 5 to 15E16 and an energy of between 20 and 200 keV.
    With reference to FIG. 6E, the donor substrate 118 is bonded to the stack formed of the stiffening substrate 110 and of the semiconductor layer 111, so that the semiconductor layer 111 and the piezoelectric layer 10 are at the interface lift-off. As mentioned above, a dielectric layer (not shown in FIG. 6E) may be formed beforehand on one and / or the other of these layers in order to promote bonding. Where appropriate, a charge trapping layer (not shown in FIG. 6E) may be formed between said dielectric layer and the piezoelectric layer. Said trapping layer is advantageously formed after implantation performed in the piezoelectric substrate 118. Under these conditions, a low temperature process is required. For example, an amorphous silicon layer is deposited on the piezoelectric substrate, or a polycrystalline silicon layer is deposited on a dielectric layer formed on the semiconductor layer 111.
    In the case where it is desired to form a volume acoustic wave device, the bonding may be achieved by means of a metal layer, said layer then filling the buried electrode function in the device.
    Then, the piezoelectric donor substrate 118 is fractured along the embrittlement zone 119 so as to transfer the piezoelectric layer 10 to the semiconductor layer 111. Thinning of the piezoelectric layer may optionally be implemented to eliminate related defects. to implantation.
    In the case where the semiconductor layer does not comprise electronic components, the Smart Cut ™ process can also be implemented to transfer the semiconductor layer 111 to the stiffening substrate 110. This method is well known to the human of career. In particular, a zone of weakness in the donor substrate 116 is formed by implantation of atomic species, so as to delimit a layer to be transferred comprising the layer 111. This implantation generally employs hydrogen atoms and / or helium, the person skilled in the art being able to determine the dose and the implantation energy as a function of the material of the donor substrate and the depth to be achieved. Then, after the bonding of the donor substrate on the stiffening substrate 110, the donor substrate is detached along the weakening zone, this detachment being able to be initiated mechanically, thermally, chemically or otherwise.
    In the case where it is desired to manufacture a surface acoustic wave device, then, on the surface of the piezoelectric layer 10, metal electrodes in the form of two interdigitated combs are deposited.
    In the case where it is desired to manufacture a volume acoustic wave device, an adaptation of the steps described above must be carried out. On the one hand, before the gluing step illustrated in FIG. 6E, a first electrode is deposited on the free surface of the piezoelectric layer 10 forming part of the piezoelectric donor substrate, this first electrode being buried in the final stack. . After the transfer of the piezoelectric layer 10 to the semiconductor layer 111, a second electrode is deposited on the free surface of the piezoelectric layer, opposite to the first electrode. On the other hand, to prevent propagation of the acoustic waves in the semiconductor layer 111 and in the stiffening substrate 110, an insulating means is incorporated in the semiconductor layer 111, which may be, for example, a Bragg mirror. (as illustrated in Figure 2) or a cavity etched in the semiconductor layer 111.
    REFERENCES
    [1] Hashimoto et al, Recent Development of Temperature Compensated SAW
    Devices, Ultrasonics Symposium (IUS), 18-21 Oct. 2011, pp. 79-86, 2011 IEEE International FR 2 816 445
    权利要求:
    Claims (13)
    [1" id="c-fr-0001]
    Substrate (1) for a surface acoustic wave or bulk acoustic wave device comprising a support substrate (11) and a piezoelectric layer (10) on said support substrate, characterized in that the support substrate (11) comprises a semiconductor layer (111) on a stiffening substrate (110) having a coefficient of thermal expansion closer to the thermal expansion coefficient of the piezoelectric layer material (10) than that of silicon, the semiconductor layer ( 111) being arranged between the piezoelectric layer (10) and the stiffening substrate (110).
    [2" id="c-fr-0002]
    2. Substrate according to claim 1, characterized in that the stiffening substrate (110) comprises sapphire, glass and / or spinel (MgAl 2 O 4).
    [3" id="c-fr-0003]
    3. Substrate according to one of claims 1 or 2, characterized in that the semiconductor layer (111) is formed of one of the following materials: silicon, germanium, SiGe, SiC, material III-V.
    [4" id="c-fr-0004]
    4. Substrate according to one of claims 1 to 3, characterized in that the semiconductor layer (111) comprises at least one electronic component (112).
    [5" id="c-fr-0005]
    5. Substrate according to claim 4, characterized in that said electronic component (112) is selected from: a CMOS transistor, a switch and a power amplifier.
    [6" id="c-fr-0006]
    6. Substrate according to one of claims 1 to 5, characterized in that the ratio between the thickness of the piezoelectric layer (10) and the thickness of the stiffening substrate (110) is less than or equal to 0.125.
    [7" id="c-fr-0007]
    Substrate according to one of Claims 1 to 6, characterized in that the thickness of the piezoelectric layer (10) is less than 50 μm, preferably less than 20 μm, more preferably less than 1 μm, and the thickness of the stiffening substrate (110) is between 400 and 800 μm.
    [8" id="c-fr-0008]
    8. Substrate according to one of claims 1 to 7, characterized in that it comprises a dielectric layer (114) between the piezoelectric layer (10) and the semiconductor layer (111) and a layer (115) entrapment charge at the interface between said dielectric layer and the semiconductor layer and / or at the interface between the dielectric layer and the piezoelectric layer.
    [9" id="c-fr-0009]
    9. Substrate according to claim 8, characterized in that said charge trapping layer (115) comprises a polycrystalline silicon layer.
    [10" id="c-fr-0010]
    10. A surface acoustic wave device comprising a substrate (1) according to one of claims 1 to 9 and two electrodes (12, 13) formed of two interdigitated metal combs on the surface of the piezoelectric layer (10).
    [11" id="c-fr-0011]
    11. Volume acoustic wave device comprising a substrate (1) according to one of claims 1 to 9 and two electrodes (12, 13) arranged on either side of the piezoelectric layer (10).
    [12" id="c-fr-0012]
    12. A method of manufacturing a substrate (1) according to one of claims 1 to 9, characterized in that it comprises: - the transfer of the semiconductor layer (111) on the stiffening substrate (110) to from a first donor substrate (116), - the transfer of the piezoelectric layer on the semiconductor layer (111) from a second donor substrate (118).
    [13" id="c-fr-0013]
    13. The method of claim 12, wherein at least one of the transfer steps comprises the following substeps: forming an embrittlement zone in the first or the second donor substrate by implantation of atomic species; gluing the first and second donor substrates respectively to the stiffener substrate or to the semiconductor layer; detachment of said first, respectively second, substrate along the zone of weakening.
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    法律状态:
    2016-11-21| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-23| PLSC| Publication of the preliminary search report|Effective date: 20170623 |
    2017-11-21| PLFP| Fee payment|Year of fee payment: 3 |
    2018-11-27| PLFP| Fee payment|Year of fee payment: 4 |
    2019-11-20| PLFP| Fee payment|Year of fee payment: 5 |
    2020-11-25| PLFP| Fee payment|Year of fee payment: 6 |
    2021-11-25| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
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    FR1563058|2015-12-22|
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    EP21167505.3A| EP3869574A1|2015-12-22|2016-12-21|Substrate for a device with temperature-compensated surface acoustic waves or volume acoustic waves|
    US16/064,419| US10608610B2|2015-12-22|2016-12-21|Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device|
    SG11201805398VA| SG11201805398VA|2015-12-22|2016-12-21|Substrate for a temperature-compensated surface acoustic wave device or bulk acoustic wave device|
    KR1020187021269A| KR20180097710A|2015-12-22|2016-12-21|A temperature-compensated surface acoustic wave device or a substrate for a bulk acoustic wave device|
    EP16820264.6A| EP3394908B1|2015-12-22|2016-12-21|Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device|
    JP2018532612A| JP6847957B2|2015-12-22|2016-12-21|Substrate for temperature compensated surface acoustic wave device or bulk acoustic wave device|
    PCT/EP2016/082252| WO2017109000A1|2015-12-22|2016-12-21|Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device|
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    US17/141,065| US20210121103A1|2015-12-22|2021-01-04|Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device|
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